| PART |
Description |
Maker |
| APT26F120B2 APT26F120L |
N-Channel FREDFET 1200V, 26A, 0.65Ω Max, trr ?35ns
N-Channel FREDFET 1200V, 26A, 0.65ヘ Max, trr ÷335ns
|
Microsemi Corporation
|
| APT12045L2VR |
POWER MOS V 1200V 26A 0.450 Ohm
|
Advanced Power Technology
|
| STU26NM60 STU26NM60I |
26 A, 600 V, 0.135 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 26A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 600V的五（巴西）直|6A条（丁）|20VAR
N-CHANNEL 600V 0.125 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET
|
STMICROELECTRONICS
Integrated Device Technology, Inc.
SGS Thomson Microelectronics
|
| APT38F80B209 APT38F80L |
N-Channel FREDFET 41 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
N-Channel FREDFET 41 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
N-Channel FREDFET
|
Microsemi Corporation
Microsemi, Corp.
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRCZ24 |
Power MOSFET(Vdss=55V/ Rds(on)=0.040ohm/ Id=26A)
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier
|
| APT50M60L2VFR_04 APT50M60L2VFR APT50M60L2VFR04 APT |
77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V㈢ FREDFET
POWER MOS V? FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
MICROSEMI[Microsemi Corporation]
|
| HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 25N40L-T47-T 25N40G-T47-T |
400V, 26A N-CHANNEL POWER MOSFET
400V, 26A N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| W26NM50 |
N-CHANNEL 500V - 0.10ohm - 26A TO-247 Zener-Protected MDmesh TM Power MOSFET
|
意法半导
|
| APT30F50B |
N-Channel FREDFET
|
MICROSEMI[Microsemi Corporation]
|
|
